Two-Dimensional Model for the Subthreshold Slope in Deep-Submicron Fully-Depleted SO1 MOSFET's
نویسندگان
چکیده
A 2D analytical model for the calculation of the subthreshold slope has been derived for deep-submicron Fully-Depleted SO1 MOSFET's using a Green's function solution technique. The accuracy of the equations has been verified by a 2D numerical device simulator. It is shown that the analytically derived model for the subthreshold slope is in good agreement with 2D numerical simulation data.
منابع مشابه
Scaling the Si MOSFET : From Bulk to SO 1 to Bulk
Scaling the Si MOSFET is revisited. Requirements on subthreshold leakage control force conventional scaling to use high doping as the device dimension penetrates into the deep-submicrometer regime, leading to undesirable large junction capacitance and degraded mobility. By studying the scaling of fully depleted SO1 devices, we note the important concept of controlling horizontal leakage through...
متن کاملFully 2D quantum-mechanical simulation of nanoscale MOSFETs
We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET's. The validity of semiclassical transport models are first discussed. Then, QM effects on threshold voltage, subthreshold slope and short-channel performances are addressed. We show that QM effects significantly affect device performances in the nanoscale range.
متن کاملThree-Dimensional Hydrodynamic Simulation of Submicron MOSFET's
This paper presents a method for solving the 3-D hydrodynamic (HD) model in submicron semiconductor devices. The main features of this method aTe the fairly low memory and CPU time requirements, and excellent convergent property. Simulation results of a 3-D submicron MOSFET are provided.
متن کاملA Simple General-purpose I-V Model for All Operating Modes of Deep Submicron MOSFETs
A simple general-purpose I-V model for all operating modes of deep-submicron MOSFETs is presented. Considering the most dominant short channel effects with simple equations including few extra parameters, a reasonable trade-off between simplicity and accuracy is established. To further improve the accuracy, model parameters are optimized over various channel widths and full range of operating v...
متن کاملViability of Low Temperature Deep and Ultra Deep Submicron Scaled Bulk nMOSFETs on Ultra Low Power Applications
Chip cooling is an attractive option for leakage control and power as well as thermal management of high performance ICs. Subthreshold leakage being the main leakage contributor in nanoscale CMOS, it rapidly increases with scaling due to continuous reduction in the supply voltage and is highly temperature sensitive. The authors in this work investigate Si bulk nMOSFETs using both constant volta...
متن کامل